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rev 2 september 2005 1/15 15 stb9nk90z - stf9nk90z stp9nk90z - stw9nk90z n-channel 900v - 1.1 ? - 8a - to-220/fp-d2pak-to-247 zener-protected supermesh? mosfet general features extremely high dv/dt capability 100% avalanche tested gate charge minimized description the supermesh? series is obtained through an extreme optimization of st?s well established strip-based powermesh? layout. in addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. applications high current, high speed switching switch mode power supplies dc-ac converters for welding, ups and motor drive order codes package internal schematic diagram type v dss r ds(on) i d pw stb9nk90z stw9nk90z stp9nk90z stf9nk90z 900 v 900 v 900 v 900 v <1.3 ? <1.3 ? <1.3 ? <1.3 ? 8 a 8 a 8 a 8 a 160 w 160 w 160 w 40 w 1 2 3 1 2 3 to-220 to-220fp 1 3 to-247 d2pak 1 2 3 sales type marking package packaging stb9nk90z b9nk90z d2pak tape & reel stf9nk90z f9nk90z to-220fp tube stp9nk90z p9nk90z to-220 tube stw9nk90z w9nk90z to-247 tube www.st.com
1 electrical ratings stb9nk90z - stf9nk90z - stp9nk90z - stw9nk90z 2/15 1 electrical ratings table 1. absolute maximum ratings table 2. thermal data table 3. avalanche characteristics symbol parameter value unit to-220/d2pak/ to-247 to-220fp v ds drain-source voltage (v gs = 0) 900 v v dgr drain-gate voltage (r gs = 20k ? ) 900 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25c 88 ( note 1) a i d drain current (continuous) at t c = 100c 55 ( note 1) a i dm note 2 drain current (pulsed) 32 32 ( note 1) a p tot total dissipation at t c = 25c 160 40 w derating factor 1.28 0.32 w/c vesd(g-s) g-s esd (hbm c=100pf, r=1.5k ?) 4kv dv/dt note 3 peak diode recovery voltage slope 4.5 v/ns v iso insulation withstand volatge (dc) -- 2500 v t j t stg operating junction temperature storage temperature -55 to 150 c to-220/ d2pak to-220fp to-247 unit rthj-case thermal resistance junction-case max 0.78 3.1 0.78 c/w rthj-amb thermal resistance junction-amb max 62.5 50 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 8a e as single pulse avalanche energy (starting tj=25c, i d =i ar , v dd = 50v) 300 mj
stb9nk90z - stf9nk90z - stp9nk90z - stw9nk90z 2 electrical characteristics 3/15 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states table 5. dynamic table 6. switching times symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 900 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating,tc=125c 1 50 a i gss gate body leakage current (v ds = 0) v gs = 20 v, v ds = 0 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 33.754.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 3.6 a 1.1 1.3 ? symbol parameter test conditions min. typ. max. unit g fs note 4 forward transconductance v ds =15v, i d = 3.6 a 5.75 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f=1 mhz, v gs =0 2115 190 40 pf pf pf c oss eq. note 5 equivalent ouput capacitance v gs =0, v ds =0v to 720v 115 pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =720v, i d = 8a v gs =10v (see figure 19) 72 14 38 100 nc nc nc symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =450 v, i d =4a, r g =4.7 ?, v gs =10v (see figure 20) 22 13 ns ns t d(off) t f turn-off delay time fall time v dd =450 v, i d =4a, r g =4.7 ?, v gs =10v (see figure 20) 55 28 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =720 v, i d =8a, r g =4.7 ?, v gs =10v (see figure 20) 53 11 22 ns ns ns
2 electrical characteristics stb9nk90z - stf9nk90z - stp9nk90z - stw9nk90z 4/15 table 7. gate-source zener diode table 8. source drain diode (1)limited only by maximum temperature allowed (2) pulse width limited by safe operating area (3) i sd 10a, di/dt 200a/s, v dd v (br)dss , t j t jmax (4) pulsed: pulse duration = 300s, duty cycle 1.5% (5) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% (6) the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter test conditions min. typ. max. unit bv gso note 6 gate-source breakdown voltage igs=1ma (open drain) 30 v symbol parameter test conditions min. typ. max. unit i sd i sdm note 2 source-drain current source-drain current (pulsed) 8 32 a a v sd note 4 forward on voltage i sd =8 a, v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =8a, di/dt = 100a/s, v dd =50 v, tj=150c 950 10 21 ns c a
stb9nk90z - stf9nk90z - stp9nk90z - stw9nk90z 2 electrical characteristics 5/15 2.1 electrical characteristics (curves) figure 1. safe operating area for to-220/d2pak figure 2. thermal impedanc for to-220/d2pak figure 3. safe operating area for to-220fp figure 4. thermal impedance for to-220fp figure 5. safe operating area for to-247 figure 6. thermal impedance for to-247
2 electrical characteristics stb9nk90z - stf9nk90z - stp9nk90z - stw9nk90z 6/15 figure 7. output characteristics figure 8. transfer characteristics figure 9. transconductance figure 10. static drain-source on resistance figure 11. gate charge vs gate -source voltage figure 12. capacitance variations
stb9nk90z - stf9nk90z - stp9nk90z - stw9nk90z 2 electrical characteristics 7/15 figure 13. normalized gate threshold voltage vs temperatute figure 14. normalized on resistance vs temperature figure 15. source-drain diode forward characteristics figure 16. normalized bvdss vs temperature figure 17. maximum avalanche energy vs te mpera ture
3 test circuits stb9nk90z - stf9nk90z - stp9nk90z - stw9nk90z 8/15 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times
stb9nk90z - stf9nk90z - stp9nk90z - stw9nk90z 4 package mechanical data 9/15 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
4 package mechanical data stb9nk90z - stf9nk90z - stp9nk90z - stw9nk90z 10/15 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
stb9nk90z - stf9nk90z - stp9nk90z - stw9nk90z 4 package mechanical data 11/15 to-247 mechanical data 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0o 4o d 2 pak mechanical data 3 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
4 package mechanical data stb9nk90z - stf9nk90z - stp9nk90z - stw9nk90z 12/15 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ?p 3.55 3.65 0.140 0.143 ?r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data
stb9nk90z - stf9nk90z - stp9nk90z - stw9nk90z 5 packing mechanical data 13/15 5 packing mechanical data tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
6 revision history stb9nk90z - stf9nk90z - stp9nk90z - stw9nk90z 14/15 6 revision history date revision changes 05-sep-2005 2 inserted new package (d2pak)
stb9nk90z - stf9nk90z - stp9nk90z - stw9nk90z 6 revision history 15/15 i nformation furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the con sequences o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is granted b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subject t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are not a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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